The LTE multi-frequency multi-mode trend detonated the major transformation of the mobile phone RF front-end design

The mobile phone RF front-end (RF Front-end) will shift to a highly integrated and thin package design. With the rise of the multi-band multi-mode design boom in Long Term Evolution (LTE), the RF front-end of smartphones not only faces multi-antenna or multi-band interference and the challenge of tight design space, but also needs to support Carrier Aggregation (CA) to enhance signals Receiving capability, which has driven relevant chip developers to step up the deployment of a new generation of RF processes, and improve the functional integration and footprint of components such as single crystal microwave integrated circuits (MMICs) and RF switches, thus meeting the more stringent specifications of mobile phone manufacturers Claim.

Heiss Heinrich, director of application engineering and technology marketing at Infineon, said that with the increase in mobile information transmission, the next generation of multi-band multi-mode LTE smartphones will focus on RF front-end design to improve antenna performance and solve power consumption and frequency band interference At the same time, the carrier aggregation function required by telecom operators will be further introduced. Therefore, RF chip manufacturers must also be precise, functional integration and packaging technology, in order to meet the increasingly stringent requirements of mobile phone manufacturers for RF-related components.

Heiss Heinrich, director of application engineering and technology marketing at Infineon, mentioned that Infineon will continue to introduce more integrated RF front-end solutions in the future.

Heinrich also emphasized that Infineon has become the leader in the mobile phone RF and circuit protection device market. In order to seize the LTE multi-frequency multi-mode system design opportunities, the eighth generation of silicon germanium carbon heterogeneous bipolar transistors (SiGe: C HBT) technology, for the applications of 3G / 4G and Global Positioning System (GPS), respectively, the first to develop a highly integrated low noise amplifier filter (LNA-Filter) MMIC; also announced a new complementary metal oxide Semiconductor (CMOS) radio frequency switch, comprehensively enhance the signal receiving and processing capabilities of mobile phones in high noise environment.

Jiang Zhiqiang, director of application engineering for Infineon's Asia Pacific region, added that smartphones need to increase the number of LTE multi-band and multi-mode specifications to increase the number of antennas, switches and amplifiers to support more frequency bands. Bit space has become the first issue that chip manufacturers have to overcome. In addition, mobile phones must take into account high transmission efficiency, light and thin and long-lasting power, which makes MMIC chip design facing a great test.

In addition, the RF front-end of mobile phones is becoming more and more complex, and the components will also generate strong interference with each other, which will affect the system performance. Therefore, Infineon has actively developed the bipolar silicon germanium carbon process and gradually introduced various thin packaging solutions to ensure that RF components are achieved Compact size and excellent linearity performance.

Heinrich pointed out that the company ’s eighth-generation bipolar silicon germanium carbon process will improve the sensitivity of low noise amplifiers, and the thin package can reduce the generation of harmonics of RF modules and switches, and further improve the number of mobile devices. Antenna and multi-band interference problems.

In fact, bipolar silicon-germanium-carbon technology not only helps to create LTE multi-frequency multi-mode systems, but is also suitable for ultra-high frequency applications above 60GHz, enabling high-efficiency, point-to-point communication at speeds above Gbit / s And data transmission is gradually gaining ground in the RF application field of high-end mobile devices; with the rise of various RF front-end designs that require small size, high efficiency and low power consumption, this technology is expected to help Infineon continue to expand the market. Influence.

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